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E-raamat: Optical Properties of III-V Semiconductors: The Influence of Multi-Valley Band Structures

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Optical and electronic properties of semiconductors are strongly influenced by the different possibilities of carriers to be distributed among the various extrema of the band structure or the transfer between them. The monograph Optical Properties of III-V Semiconductors is concerned with the III-V bulk and low-dimensional semiconductors with the emphasis on the implications of multi-valley bandstructures on the physical mechanisms essential for opto-electronic devices. The optical response of such semiconductor materials is determined by many-body effects like screening, gap narrowing, Fermi-edge singularity, electron-hole plasma and liquid formation. The discussion of the latter features is presented self-consistently with the dynamics of excitons and carriers resulting from intervalley coupling.

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Springer Book Archives
1. Introduction to Semiconductor Band Structures.- 1.1 Electronic States
in Crystalline Solids.- 1.2 Band Structure of IIIV Semiconductors.- 1.3 Some
General Properties of Multi-Valley Band Structures.-
2. Excitons in
Multi-Valley Semiconductors.- 2.1 Basic Properties of Three-Dimensional
Excitons.- 2.2 Direct-to-Indirect Crossover in Bulk Semiconductors.- 2.3
Exciton Dynamics in AlxGa1?xAs Near Crossover.- 2.4 Excitons in
Low-Dimensional Structures.- 2.5 Direct-to-indirect Transitions in 2D and 1D
Structures.-
3. Many-Body Effects in Multi-Valley Scenarios.- 3.1
Introduction to Screening in Highly Excited Semiconductors.- 3.2 Band-Gap
Renormalization in Bulk Semiconductors.- 3.3 Gap Renormalization in
Low-Dimensional Systems.- 3.4 Screening in One-Component Plasmas.- 3.5
ElectronHole Droplet Formation.- 3.6 Optical Nonlinearities at the Direct
Gap of Indirect-Gap Semiconductors.-
4. Intervalley Coupling.- 4.1
Theoretical Considerations.- 4.2 Optical Spectroscopy of Intervalley
Coupling.- 4.3 Indirect Stimulated Emission.-
5. Summary and Outlook.-
References.