Writing for postgraduate students, researchers and engineers in the fields of solid-state physics, semiconductor materials science, photonics and optoelectronics, the contributors of these 14 articles describe their research in the unique properties of dilute nitrides, including recent developments in fabrication techniques and potential applications. Article topics include an atomic view of the electronic structure of mixed anion III-V nitrides, theories and experiments in band anticrossing in III-N-V alloys, tight binding and k-p theory of dilute nitride alloys, an experiment in electron-effective masses of dilute nitrides, electronic properties of (GA, IN) (N, As)-based heterostructures, and the role of hydrogen in dilute nitrides. Topics also include Raman scattering in dilute FaAsN and GaPN alloys, a theory of defects in dilute nitrides, and recombination processes. Applications include characterization and band-cap engineering, GaInAs long-wavelength lasers and their applications, and applications to photovoltaic devices. Annotation ©2004 Book News, Inc., Portland, OR (booknews.com)
Since their development in the 1990s, it has been discovered that diluted nitrides have intriguing properties that are not only distinct from those of conventional semiconductor materials, but also are conducive to various applications in optoelectronics and photonics. The book examines these applications and presents a broad and in-depth look at the basic electronic and optical properties of diluted nitrides.
The aim of Physics and Applications of Diluted Nitrides is to provide graduate students, researchers and engineers with a comprehensive overview of the present knowledge and future perspectives of diluted nitrides.
Co-authored by a group of leading scientists in the field, this book brings the reader up to speed on the development and current state of diluted nitride applications, as well as the technologies to be developed in the near future.
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