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E-raamat: Poly-SiGe for MEMS-above-CMOS Sensors

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Poly-SiGe for MEMS-above-CMOS SensorsSuurem pilt
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Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability.

Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence of deposition conditions, germanium content and doping concentration on the electrical and piezoresistive properties of boron-doped poly-SiGe. The development of a CMOS-compatible process flow, with special attention to the sealing method, is also described. Piezoresistive pressure sensors with different areas and piezoresistor designs were fabricated and tested. Together with the piezoresistive pressure sensors, also functional capacitive pressure sensors were successfully fabricated on the same wafer, proving the versatility of poly-SiGe for MEMS sensor applications. Finally, a detailed analysis of the MEMS processing impact on the underlying CMOS circuit is also presented.
1 Introduction
1(24)
1.1 Motivation and Goal of This Work
1(1)
1.2 MEMS: Definition, Technologies and Applications
2(3)
1.3 CMOS-MEMS Integration: Why, How and What?
5(3)
1.4 Polycrystalline SiGe for MEMS-above-CMOS Applications
8(5)
1.4.4 SiGe MEMS Demonstrators
8(2)
1.4.4 Poly-SiGe Deposition Technology
10(1)
1.4.4 Selected Poly-SiGe Structural Layer
11(2)
1.5 A Poly-SiGe Based MEMS Pressure Sensor
13(4)
1.5.5 Applications of MEMS Pressure Sensors
13(1)
1.5.5 Technologies for MEMS Pressure Sensors
14(1)
1.5.5 Why a Poly-SiGe Based MEMS Pressure Sensor?
15(2)
1.6 Outline of the Book
17(8)
References
19(6)
2 Poly-SiGe as Piezoresistive Material
25(26)
2.1 Introduction to Piezoresistivity
25(5)
2.1.1 Single Crystalline Materials
26(3)
2.1.1 Polycrystalline Materials
29(1)
2.1.1 Definition of the Gauge Factor
30(1)
2.2 Sample Preparation
30(4)
2.2.2 Layout and Fabrication Process
30(2)
2.2.2 Poly-SiGe Layers Studied
32(2)
2.3 Measurement Setup
34(4)
2.3.3 The Four Point Bending Method
36(1)
2.3.3 Calculation of the Piezoresistive Coefficients
37(1)
2.4 Results and Discussion
38(8)
2.4.4 Standard Poly-SiGe Layer and Comparison to Poly-Si
38(3)
2.4.4 Optimization of Boron Doped Poly-SiGe Layers for Piezoresistive Sensing Applications
41(4)
2.4.4 Piezoresistivity and Electrical Properties of Poly-SiGe Deposited at CMOS-Compatible Temperatures
45(1)
2.5 Summary and Conclusions
46(5)
References
47(4)
3 Design of a Poly-SiGe Piezoresistive Pressure Sensor
51(24)
3.1 A Piezoresistive Pressure Sensor: Definition and Important Performance Parameters
51(6)
3.1.1 Definition
51(2)
3.1.1 Important Parameters
53(4)
3.2 Design
57(14)
3.2.2 Membrane Area and Thickness
59(3)
3.2.2 Piezoresistor Placement
62(3)
3.2.2 Piezoresistor Dimensions
65(2)
3.2.2 Piezoresistor Shape
67(2)
3.2.2 Membrane Shape
69(2)
3.2.2 Effect of Supports
71(1)
3.3 Summary and Conclusions of the Sensor Design
71(4)
References
73(2)
4 The Pressure Sensor Fabrication Process
75(26)
4.1 The Pressure Sensor Fabrication Process: A Generic Technology
75(5)
4.2 Pressure Sensor Schematic Process Flow
80(7)
4.3 Process Developments and Challenges
87(8)
4.3.3 Piezoresistive Layer
89(1)
4.3.3 Piezoresistor Patterning
89(2)
4.3.3 Release
91(1)
4.3.3 Sealing
92(1)
4.3.3 Piezoresistor Contact
93(2)
4.4 Discussion on the Poly-SiGe Pressure Sensor Process
95(6)
References
98(3)
5 Sealing of Surface Micromachined Poly-SiGe Cavities
101(26)
5.1 Introduction
101(2)
5.2 Fabrication Process
103(3)
5.3 Direct Sealing
106(3)
5.3.3 Sealing with Si-Oxide
106(3)
5.3.3 Sealing with AlCu
109(1)
5.4 Intermediate Porous Cover
109(4)
5.5 Measurement Setup
113(1)
5.6 Analytical Model
114(2)
5.7 Results and Discussion
116(8)
5.7.7 Membrane Behavior Under O-Pressure Difference
119(2)
5.7.7 Cavity Pressure
121(2)
5.7.7 Long-Term Hermeticity
123(1)
5.8 Summary and Conclusion
124(3)
References
125(2)
6 Characterization of Poly-SiGe Pressure Sensors
127(22)
6.1 Measurement Setup
127(2)
6.2 Measurement Results: Pressure Response
129(12)
6.2.2 Sensitivity
131(3)
6.2.2 Comparison to Simulations
134(4)
6.2.2 Offset
138(1)
6.2.2 Nonlinearity
139(1)
6.2.2 Thermal Behaviour
140(1)
6.3 Summary and Conclusions
141(3)
6.4 Capacitive Pressure Sensors
144(5)
References
147(2)
7 CMOS Integrated Poly-SiGe Piezoresistive Pressure Sensor
149(26)
7.1 The Sensor Readout Circuit: An Instrumentation Amplifier
149(12)
7.1.1 Design
151(4)
7.1.1 Layout
155(4)
7.1.1 Fabrication
159(1)
7.1.1 Measurements
160(1)
7.2 Fabrication of a CMOS Integrated Pressure Sensor
161(6)
7.3 Effect of the MEMS Processing on CMOS
167(2)
7.4 Evaluation of the CMOS-Integrated Pressure Sensor
169(3)
7.5 Conclusions
172(3)
References
173(2)
8 Conclusions and Future Work
175(6)
8.1 Conclusions and Contribution of the Dissertation
175(4)
8.2 Future Research Directions and Recommendations
179(2)
Appendix A 181(8)
Appendix B 189(4)
Appendix C 193(4)
Appendix D 197
Pilar González Ruiz received her M.S. degree in Electrical Engineering from the University of Sevilla, Spain, in 2006. She obtained the PhD degree from the Electrical Engineering Department (ESAT) at the University of Leuven, Belgium in 2012. During her PhD  she worked on the integration of MEMS and CMOS using polycrystalline silicon-germanium, with a focus on pressure sensors, at imec, Leuven, Belgium. Since 2012 she has been working on integrated imagers at imec, Leuven, Belgium. She has authored or co-authored more than 10 technical papers for publication in journals and presentations at conferences and holds various patents.





Kristin De Meyer M.Sc. (1974), PhD (1979) KULeuven. She was holder of an IBM World Trade Postdoctoral Fellowship at the IBM T. J. Watson Research Center, Yorktown Heights, NY. Currently she is the Director of Doctoral Research in imec. Since October 1986, she has also been a Part-Time Professor with ESAT-INSYS, KUL. She was the Coordinator for IMEC in several EEC projects.  Dr. De Meyer is an IIEE fellow ,member of the Belgian Federal Council for Science Policy and (co) author of over 500 publications.





Ann Witvrouw received an MS degree in Metallurgical Engineering in 1986 from the Katholieke Universiteit Leuven, Belgium, and both an MS degree in Applied Physics in 1987 and a Ph.D. degree in Applied Physics in 1992 from Harvard University, USA. In 1992 she joined imec, Belgium where she worked on the reliability of metal interconnects until the end of 1998. In 1998 she switched to research in Micro-electromechanical Systems at imec, focusing on advanced MEMS process technologies. From 2000 to 2013 she has been working on MEMS integration at imec, first as team leader, then as a program manager and last as a principal scientist. Currently she is a guest professor at the KULeuven, teaching part of a course on Nanomaterials for nanoelectronics.
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