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E-raamat: Recent Progress In Silicon-based Spintronic Materials

(Lawrence Livermore Nat'l Lab, Usa), (Univ Of California, Davis, Usa), (Univ Of California, Davis, Usa)
  • Formaat: 164 pages
  • Sari: Series On Spintronics 1
  • Ilmumisaeg: 16-Dec-2014
  • Kirjastus: World Scientific Publishing Co Pte Ltd
  • Keel: eng
  • ISBN-13: 9789814641012
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Recent Progress In Silicon-based Spintronic MaterialsSuurem pilt
  • Formaat: 164 pages
  • Sari: Series On Spintronics 1
  • Ilmumisaeg: 16-Dec-2014
  • Kirjastus: World Scientific Publishing Co Pte Ltd
  • Keel: eng
  • ISBN-13: 9789814641012
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This book covers the crucial aspects of theoretical and experimental approaches for Si-based spintronic materials. The theory parts emphasize on two first-principles methods — the GW method to improve the insulating gaps of the half metals which are a class of materials ideal for spintronic applications, and the linear response theory to calculate electric and magnetic susceptibilities. Three growth methods for doping transition metal elements in alloy and layered forms in Si will be focused on. Also three methods for characterization will be presented emphasizing on how to interpret experimental results. Finally, recent progress made in the Si-based spintronic materials will be discussed. This book is intended for researchers and graduate students who are interested in designing and growing new spintronic materials, in particular, silicon-based.
Preface vii
1 Spin-based Materials
1(36)
1.1 Introduction
1(3)
1.1.1 History
1(1)
1.1.2 Spintronic devices
2(1)
1.1.3 Applications
3(1)
1.2 Crystals
4(15)
1.2.1 Unit cells
5(7)
1.2.2 Determination of the crystal structure
12(4)
1.2.3 Bloch's theorem
16(2)
1.2.4 Modulated crystal structures
18(1)
1.3 Spin dependent interactions
19(9)
1.3.1 Direct fermion exchange
20(5)
1.3.2 The RKKY interaction
25(2)
1.3.3 The spin-orbit interaction
27(1)
1.4 Half-metals
28(9)
1.4.1 Conditions for half-metals
28(2)
1.4.2 Interactions resulting in half-metallicity
30(1)
1.4.3 Estimating the magnetic moment
31(2)
1.4.4 Mechanisms that hinder half-metallicity
33(4)
2 Methods of Studying Spintronics
37(76)
2.1 Theory
37(42)
2.1.1 Density functional theory
38(4)
2.1.2 The Kohn-Sham equations
42(1)
2.1.3 Approximate forms of the exchange-correlation functional
43(5)
2.1.4 The augmented plane wave method
48(4)
2.1.5 The pseudopotential method
52(7)
2.1.6 Linear response theory
59(3)
2.1.7 The GW method
62(5)
2.1.8 Methods of calculating Tc
67(12)
2.2 Growth methods
79(5)
2.2.1 The ion implantation method
79(2)
2.2.2 Vacuum deposition methods
81(2)
2.2.3 The molecular beam epitaxy method
83(1)
2.3 Characterization
84(29)
2.3.1 Structural properties
85(5)
2.3.2 Transport
90(4)
2.3.3 Magnetic characterization
94(19)
3 Progress in Si-based Spintronics
113(26)
3.1 Dilute doped Mn in Si
113(5)
3.1.1 Early experiments
114(1)
3.1.2 Substitutional Mn in Si supercells
115(3)
3.2 Si-based digital ferromagnetic heterostructure
118(7)
3.2.1 Perfect δ-layer
119(3)
3.2.2 Defect models
122(3)
3.3 Single doping of Fe and Mn in Si
125(4)
3.4 Trilayers
129(4)
3.5 MnSi Clusters
133(6)
3.5.1 Growth of MnSi
133(3)
3.5.2 Theoretical Studies of MnSix, x 1.7
136(3)
Bibliography 139(8)
Index 147
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