Foreword |
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xvii | |
Preface |
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xix | |
Forethought |
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xxiii | |
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1 Introduction and Applications of SiC Ceramics |
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1 | (80) |
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1.1 Introduction to SiC ceramics |
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1 | (8) |
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9 | (4) |
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1.2.1 Berzelius and other 19th century chemists |
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9 | (1) |
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1.2.2 The discovery of moissanite---natural SiC |
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10 | (1) |
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11 | (2) |
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1.3 Edward Goodrich Acheson and industrial SiC |
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13 | (11) |
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13 | (2) |
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1.3.2 The Acheson process |
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15 | (4) |
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1.3.3 Industrial SiC produced by the Acheson process |
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19 | (2) |
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1.3.4 The Carborundum Company |
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21 | (3) |
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1.4 Applications of SiC ceramics |
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24 | (2) |
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26 | (13) |
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1.5.1 Brief background to ceramic armour |
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27 | (3) |
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1.5.2 Reasons for the global dominance of SiC in body armour |
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30 | (1) |
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1.5.3 Ceramic armour projectile-defeat mechanisms |
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30 | (2) |
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1.5.4 Ceramic armour versus metal armour |
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32 | (1) |
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1.5.5 Ceramic armour design principles |
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33 | (1) |
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1.5.6 Advanced munitions against which armour ceramics are essential |
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34 | (2) |
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1.5.7 DSSC and RSSC as ceramic armour |
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36 | (1) |
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1.5.8 GBSC-CMC as ceramic armour |
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37 | (2) |
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1.6 SiC wear-resistant ceramics |
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39 | (18) |
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1.6.1 Wear in the industrial environment |
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39 | (1) |
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1.6.2 Alumina --- the cheap mass-market incumbent |
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39 | (1) |
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1.6.3 SiC: SNBSC, RSSC and DSSC |
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39 | (3) |
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1.6.4 Tungsten carbide cermets (cemented carbides) |
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42 | (2) |
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44 | (5) |
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1.6.6 Material properties and wear resistance |
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49 | (6) |
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1.6.7 Summary of wear criteria |
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55 | (1) |
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1.6.8 Wear applications for wear-resistant ceramics |
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55 | (2) |
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57 | (11) |
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1.7.1 Prehistory of the refractories industry |
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57 | (1) |
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1.7.2 Major uses of refractories |
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58 | (1) |
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1.7.3 Key requirements for refractories |
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59 | (1) |
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1.7.4 Classification of refractories |
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59 | (1) |
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1.7.5 Refractory bricks and monolithic refractories |
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59 | (1) |
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60 | (1) |
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1.7.7 SiC in the refractories industry |
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60 | (3) |
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1.7.8 Significant new applications with the advent of SNBSC |
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63 | (5) |
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1.8 Precision ceramics and other niche applications for SiC |
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68 | (6) |
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1.8.1 Nuclear fuel encapsulation |
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69 | (1) |
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70 | (2) |
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72 | (1) |
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1.8.4 Heat exchangers for high-temperature applications |
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72 | (1) |
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1.8.5 SiC in the automotive industry |
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72 | (1) |
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73 | (1) |
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73 | (1) |
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1.9 SiC ceramics: the future |
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74 | (7) |
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1.9.1 Single-crystal semiconductor wafers |
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74 | (1) |
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75 | (1) |
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1.9.3 SiC---SiC for aerospace and nuclear energy |
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75 | (1) |
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1.9.4 Wear-resistant ceramics |
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75 | (1) |
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75 | (1) |
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76 | (1) |
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76 | (5) |
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2 Structure and Properties of SiC Ceramics |
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81 | (84) |
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2.1 Structure and crystallography |
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81 | (6) |
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81 | (1) |
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82 | (2) |
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2.1.3 Industrially relevant polytypes |
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84 | (3) |
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87 | (1) |
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87 | (22) |
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2.2.1 Mechanical properties of SiC |
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90 | (7) |
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2.2.2 Thermomechanical properties |
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97 | (6) |
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2.2.3 Chemical properties |
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103 | (4) |
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2.2.4 Electrical properties |
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107 | (2) |
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2.3 Sintering mechanisms of SiC ceramics |
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109 | (16) |
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109 | (4) |
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2.3.2 Thermodynamic principles underlying sintering |
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113 | (6) |
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2.3.3 Sintering mechanisms |
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119 | (4) |
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2.3.4 Grain growth and pore elimination |
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123 | (2) |
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2.4 Liquid-phase sintering of SiC |
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125 | (5) |
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2.5 Summary of SiC sintering aid systems developed to date |
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130 | (4) |
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2.6 Boron---carbon sintering aids: modes of action |
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134 | (20) |
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2.6.1 Boron---carbon in the beginning: Prochazka 1973 |
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134 | (1) |
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2.6.2 Boron---carbon in the late 20th century |
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135 | (2) |
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2.6.3 The emerging debate: does liquid-phase sintering occur in SSiC-DSSC? |
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137 | (1) |
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2.6.4 The effects of carbon in B--C-doped SSiC-DSSC |
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138 | (6) |
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2.6.5 The effects of boron in B--C-doped SSiC-DSSC: Stobierski 2003 |
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144 | (5) |
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2.6.6 Dihedral angles in B--C-doped SSiC-DSSC: Stobierski 2003 |
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149 | (3) |
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2.6.7 Stobierski 2003: conclusions |
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152 | (1) |
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2.6.8 Boron---carbon sintering aids: research after 2003 |
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152 | (2) |
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2.7 Aluminium---carbon and aluminium---boron---carbon |
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154 | (2) |
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2.8 Beryllium---boron---carbon |
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156 | (1) |
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2.9 Liquid-phase sintered SiC: sintering aids |
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156 | (1) |
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157 | (8) |
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158 | (7) |
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3 SiC Single Crystal Semiconductors |
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165 | (50) |
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165 | (4) |
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3.1.1 Advantages of SiC as a semiconductor wafer material |
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165 | (2) |
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3.1.2 Early SiC semiconductor use: light emitting diode |
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167 | (2) |
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3.2 Brief history of the semiconductor industry |
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169 | (1) |
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3.3 Silicon wafer synthesis: the Czochralski method |
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170 | (1) |
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3.4 SiC thin film coatings |
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171 | (5) |
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172 | (1) |
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3.4.2 Chemical vapour deposition concept and origins |
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172 | (1) |
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3.4.3 Chemical vapour deposition and temperature reduction |
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173 | (1) |
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3.4.4 Chemical vapour deposition heat source |
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173 | (1) |
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3.4.5 Chemical vapour deposition and photolithography in semiconductor manufacture |
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173 | (1) |
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3.4.6 Chemical vapour deposition of SiC |
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174 | (1) |
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3.4.7 Step-controlled epitaxy: the key to SiC boule synthesis |
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174 | (2) |
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3.5 SiC single crystal wafers --- technical challenges: melting SiC and polytypism |
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176 | (2) |
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3.6 1955: the Lely process |
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178 | (2) |
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3.7 The SiC semiconductor Hiatus: 1960s-90s |
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180 | (1) |
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3.8 Evolution of the Lely process |
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181 | (8) |
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3.9 SiC single crystal boules at the dawn of the 21st century |
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189 | (5) |
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194 | (9) |
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3.10.1 Micropipes defined and imaged |
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195 | (5) |
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3.10.2 Liquid-phase epitaxy --- a partial solution to micropipes |
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200 | (1) |
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3.10.3 The `repeated A-face' growth process breakthrough |
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200 | (3) |
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3.11 21st century: SiC semiconductor applications |
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203 | (7) |
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3.11.1 SiC: well ahead of silicon and gallium nitride for power electronics |
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204 | (1) |
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3.11.2 Timeline of the 21st century SiC semiconductor boom |
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205 | (1) |
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3.11.3 Shottky barrier diodes |
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206 | (1) |
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3.11.4 Field-effect transistor |
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206 | (2) |
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208 | (1) |
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208 | (1) |
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3.11.7 SiC device design and packaging considerations |
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209 | (1) |
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3.12 SiC semiconductors: conclusions |
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210 | (5) |
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211 | (4) |
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215 | (36) |
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4.1 Hot-pressed SiC in context |
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215 | (1) |
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4.2 Dense pure SiC: the commercial imperative |
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216 | (1) |
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4.3 Hot-pressed SiC in comparison to other SiC types |
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217 | (1) |
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4.4 The importance and inconvenience of SiC ultrafine particle size |
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218 | (3) |
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4.5 Background to hot-pressed SiC |
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221 | (1) |
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4.6 The invention of hot-pressed SiC: Alliegro 1956 |
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222 | (2) |
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4.7 Significant hot-pressed SiC patents and papers after Alliegro |
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224 | (9) |
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4.7.1 Weaver: the first hot-pressed SiC patent -- 1972 |
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224 | (1) |
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4.7.2 Prochazka's four patents on boron sintering aids for hot-pressed SiC: 1972--75 |
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225 | (4) |
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4.7.3 DSSC a hot-pressed SiC spin-off technology: Prochazka 1973 |
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229 | (1) |
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4.7.4 Carbon-fibre reinforced hot-pressed SiC: Hollenberg 1974 |
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229 | (1) |
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4.7.5 HPSC with Al2O3 sintering aid |
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230 | (2) |
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4.7.6 Hot-pressed SiC patents from the late 1970s onward |
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232 | (1) |
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4.8 Significant hot-pressed SiC research papers: late 20th century to the present day |
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233 | (2) |
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4.8.1 BaO and carbon sintering aids: 1985 |
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233 | (1) |
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4.8.2 Superplastic hot-pressing of SiC: 1996 |
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233 | (1) |
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4.8.3 Fully dense hot-pressed SiC with Al/B/C sintering aids: 2000/2001 |
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234 | (1) |
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4.8.4 Sintering aids for control of hot-pressed SiC densification and properties: 2008 |
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234 | (1) |
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4.8.5 Pyrolysis-derived HPSC |
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235 | (1) |
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4.8.6 B4C and TiC reinforced hot-pressed SiC |
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235 | (1) |
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4.9 HPSC without sintering aids: Sajgalic 2015 |
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235 | (2) |
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4.10 Hot isostatic pressing of SiC |
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237 | (2) |
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4.11 SPS/plasma pressure compaction |
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239 | (1) |
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4.12 Hot-pressed SiC production considerations |
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239 | (8) |
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239 | (2) |
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4.12.2 Practical considerations |
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241 | (1) |
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4.12.3 Temperature measurement |
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242 | (2) |
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4.12.4 Hot-pressed SiC furnaces |
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244 | (3) |
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4.13 Hot-pressed SiC concluding comments |
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247 | (4) |
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248 | (3) |
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5 Direct Sintered (Pressureless Sintered) SiC: DSSC |
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251 | (98) |
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5.1 Introduction to pressureless sintered SiC |
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251 | (1) |
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5.2 Direct-sintered SiC --- the commercial imperative |
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251 | (2) |
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5.3 Direct-sintered SiC in comparison to other SiC types |
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253 | (2) |
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5.3.1 Direct-sintered Sic versus hot-pressed SiC |
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253 | (2) |
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5.4 Essential criteria for synthesising direct-sintered SiC |
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255 | (1) |
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255 | (1) |
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5.4.2 Submicron SiC powders |
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255 | (1) |
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5.4.3 Svante Prochazka --- inventor of direct-sintered SiC |
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255 | (1) |
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5.5 Solid-state sintered DSSC: development and evolution |
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256 | (26) |
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5.5.1 The first direct-sintered SiC patent: Prochazka 1973 |
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257 | (4) |
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5.5.2 Prochazka's second DSSC patent: 1975 |
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261 | (1) |
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5.5.3 Prochazka and Scanlan: 1975 SSiC-DSSC paper |
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262 | (1) |
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5.5.4 Lange and Gupta's 1976 SSiC-DSSC paper |
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263 | (2) |
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5.5.5 SSiC-DSSC patent 1 of the Coppola Carborundum/Stemcor/Kennecott team: US 4,312,954 1975 |
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265 | (4) |
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5.5.6 Patent 2 of the Coppola Carborundum/Stemcor/Kennecott team: US 4,124,667 1975 |
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269 | (1) |
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5.5.7 Patent 3 of the Coppola Carborundum/Stemcor/Kennecott team: US 4,179,299 |
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269 | (1) |
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5.5.8 Patent 4 of the Coppola Carborundum/Stemcor/Kennecott team: US 4,080,415 1975 |
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269 | (1) |
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5.5.9 Patent 5 of the Coppola Carborundum/Stemcor/Kennecott team: US 4,172,109 1976 |
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270 | (1) |
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5.5.10 Patent 6 of the Coppola Carborundum/Stemcor/Kennecott team: US 4,123,286 1976 |
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271 | (3) |
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5.5.11 Patent 7 of the Coppola Carborundum/Stemcor/Kennecott team: US 4,135,938 |
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274 | (2) |
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5.5.12 Patent 8 of the Coppola Carborundum/Stemcor/Kennecott team: US 4,237,085 |
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276 | (1) |
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5.5.13 Schwetz and Lipp of Elektroschmeltzwerk Kempten: US 4,230,497 |
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277 | (5) |
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5.6 SSiC-DSSC by the 1980s |
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282 | (1) |
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5.7 Significant SSiC-DSSC patents from the 1980s onward |
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283 | (2) |
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5.8 Significant SSiC-DSSC publications from the 1980s onward |
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285 | (18) |
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5.8.1 Sintering aid evolution for SSiC-DSSC |
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287 | (6) |
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5.8.2 Microstructure and properties of SSiC-DSSC |
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293 | (3) |
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5.8.3 The emerging debate: does liquid phase sintering occur in SSiC-DSSC? |
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296 | (4) |
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5.8.4 Densification of SSiC-DSSC by spark plasma sintering |
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300 | (2) |
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5.8.5 Other progress in SSiC-DSSC |
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302 | (1) |
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5.8.6 Microstructure of SSiC-DSSC |
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302 | (1) |
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5.9 Liquid-phase sintered dense SiC |
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303 | (6) |
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5.9.1 Liquid phase sintering defined |
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303 | (1) |
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5.9.2 The LPS-DSSC concept |
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303 | (3) |
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5.9.3 HPSC with Al2O3 sintering aid: Lange 1975 |
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306 | (1) |
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5.9.4 Omori and Takei LPS-DSSC pioneers: 1982 |
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307 | (2) |
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5.10 Evolution of LPS-DSSC |
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309 | (6) |
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5.11 LPS-DSSC in the 21st century |
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315 | (9) |
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5.12 The nanoinfiltration and transient eutectic phase process for LPS-DSSC |
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324 | (2) |
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5.13 DSSC production considerations |
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326 | (13) |
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5.13.1 The importance and inconvenience of SiC ultra-fine particle size |
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326 | (6) |
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332 | (3) |
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5.13.3 Vacuum or ambient inert gas |
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335 | (1) |
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5.13.4 Temperature measurement |
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336 | (1) |
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5.13.5 The DSSC formulations |
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337 | (2) |
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339 | (10) |
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340 | (9) |
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6 Reaction Sintered SiC (RSSC) |
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349 | (46) |
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6.1 Definition of reaction-sintered SiC |
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349 | (4) |
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6.2 Fundamental principles of reaction-sintered SiC manufacture |
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353 | (2) |
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6.3 Evolution of reaction-sintered SiC |
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355 | (7) |
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6.4 Manufacture of reaction-sintered SiC: mixture feedstock |
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362 | (9) |
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6.4.1 Ceramic powder feedstock preparation |
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362 | (1) |
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6.4.2 Ceramic powder characterisation considerations |
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363 | (2) |
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6.4.3 Silicon carbide powders |
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365 | (2) |
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367 | (4) |
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6.5 Manufacture of reaction-sintered SiC: forming methods |
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371 | (9) |
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6.5.1 Reaction-sintered SiC forming methods -- specific principles |
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372 | (1) |
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6.5.2 Dry forming versus wet forming |
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372 | (1) |
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6.5.3 Uniaxial die pressing (dry forming process) |
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373 | (3) |
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6.5.4 Cold isostatic pressing (dry forming process) |
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376 | (1) |
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6.5.5 Extrusion (wet forming process) |
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376 | (1) |
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6.5.6 Plastic forming (wet forming Process) |
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376 | (1) |
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6.5.7 Thixotropic casting (wet forming process) |
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377 | (1) |
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6.5.8 Powder injection moulding (wet forming process) |
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378 | (1) |
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6.5.9 Gelcasting (wet forming process) |
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378 | (1) |
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6.5.10 Slip casting (wet forming process) |
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378 | (1) |
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6.5.11 Tape casting (wet forming process) |
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378 | (1) |
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6.5.12 Green machining (direct manufacture process) |
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379 | (1) |
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6.5.13 Additive manufacturing (direct-manufacture process) |
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379 | (1) |
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6.5.14 RSSC forming methods: closing remarks |
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380 | (1) |
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6.6 Manufacture of reaction-sintered SiC: reaction sintering |
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380 | (4) |
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6.6.1 Furnace and furnace atmosphere |
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380 | (2) |
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6.6.2 Sintering temperature cycle and accurate temperature control in the 1500°C plus range |
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382 | (2) |
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6.7 Reaction bonded boron carbide |
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384 | (3) |
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6.7.1 Boron---silicon (binary) and boron---silicon---carbon (ternary) compounds |
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385 | (1) |
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6.7.2 Shock-induced amorphisation |
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385 | (1) |
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6.7.3 High cost of boron carbide powder |
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386 | (1) |
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6.7.4 Modest density improvement of reaction bonded boron carbide |
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386 | (1) |
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6.7.5 Reaction bonded boron carbide: concluding comments |
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387 | (1) |
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6.8 Industrial reaction-sintered SiC competitiveness |
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387 | (3) |
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390 | (1) |
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391 | (4) |
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392 | (3) |
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7 Silicon Nitride-Bonded SiC (SNBSC) |
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395 | (40) |
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7.1 Introduction to silicon nitride bonded silicon carbide |
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395 | (3) |
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7.2 Overview of SNBSC in comparison with RSSC and DSSC |
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398 | (1) |
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7.3 Origin of silicon nitride bonded silicon carbide |
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399 | (3) |
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7.4 Silicon nitride: a brief overview |
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402 | (3) |
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7.4.1 Silicon nitride ceramics |
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402 | (1) |
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7.4.2 Applications of silicon nitride ceramics |
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403 | (1) |
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7.4.3 Silicon nitride ceramics - the sintering problem |
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404 | (1) |
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7.4.4 Densification of silicon nitride ceramics |
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404 | (1) |
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405 | (2) |
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7.6 Fundamentals of the SNBSC process |
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407 | (4) |
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7.6.1 Silicon particle size |
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408 | (2) |
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410 | (1) |
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7.6.3 SNBSC body formulation |
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410 | (1) |
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411 | (1) |
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7.6.5 Nitridation temperature |
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411 | (1) |
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7.7 Evolution of the SNBSC manufacturing process |
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411 | (4) |
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7.7.1 Nitridation temperature |
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412 | (1) |
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7.7.2 Nitridation catalysts |
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413 | (1) |
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414 | (1) |
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414 | (1) |
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7.7.5 Alternative densification methods for SNBSC |
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414 | (1) |
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7.7.6 Other SNBSC innovations |
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415 | (1) |
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7.7.7 Hot-pressed SiC-Si3N4 formulations |
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415 | (1) |
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415 | (5) |
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7.9 A brief overview of the contemporary SNBSC manufacturing process |
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420 | (2) |
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7.9.1 Basic principles of manufacture |
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421 | (1) |
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7.9.2 Basic steps in the production process |
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422 | (1) |
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7.10 SNBSC: refractory applications |
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422 | (7) |
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7.10.1 Iron and steel industry |
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423 | (3) |
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7.10.2 Nonferrous metals industry |
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426 | (3) |
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7.11 SNBSC as an industrial wear-resistant ceramic |
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429 | (2) |
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431 | (4) |
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|
431 | (4) |
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8 Glass-Bonded SiC (GBSC) |
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|
435 | (56) |
|
8.1 Introduction to glass-bonded SiC |
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435 | (4) |
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8.2 Brief background to relevant ceramic armour principles |
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439 | (4) |
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8.2.1 Multi-hit performance |
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439 | (1) |
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8.2.2 Advanced munitions against which glass-bonded SiC ceramic metal composite is optimal |
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439 | (3) |
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8.2.3 Glass-bonded SiC ceramic metal composite as ceramic armour |
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442 | (1) |
|
8.3 The history and evolution of glass-bonded SiC |
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443 | (8) |
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8.3.1 Brief history of glass-bonded SiC and the grinding wheel |
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444 | (3) |
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8.3.2 Brief history of glass-bonded SiC as a refractory |
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447 | (2) |
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8.3.3 Contemporary glass-bonded SiC technology |
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449 | (1) |
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8.3.4 Background to the glass-bonded SiC ceramic matrix composite development |
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450 | (1) |
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8.4 The materials science of glass-bonded SiC ceramic metal composite metal-reinforced-ceramic |
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451 | (12) |
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8.4.1 Glass-bonded SiC ceramic metal composite defined |
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451 | (1) |
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8.4.2 Evolution of the glass-bonded SiC ceramic metal composite technology |
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452 | (2) |
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8.4.3 Optimisation of the glass-bonded SiC ceramic metal composite ceramic-component |
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454 | (4) |
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8.4.4 Optimisation of the metal reinforcement |
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458 | (1) |
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8.4.5 Residual compressive stress |
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458 | (4) |
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8.4.6 Weight increase from metal mesh |
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|
462 | (1) |
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8.4.7 Glass-bonded SiC ceramic metal composite mass-production and commercial competitiveness |
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|
462 | (1) |
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8.5 Ballistic testing of glass-bonded SiC ceramic metal composite |
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|
463 | (16) |
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8.5.1 Multihit with full-metal-jacketed ammunition |
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|
464 | (2) |
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8.5.2 APM2: 7.62 armour-piercing vehicle armour |
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|
466 | (6) |
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8.5.3 Improvised explosive device testing |
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|
472 | (2) |
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8.5.4 Shaped-charge testing |
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|
474 | (4) |
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8.5.5 Other glass-bonded SiC ceramic metal composite ballistic testing |
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|
478 | (1) |
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8.6 General discussion of glass-bonded SiC ceramic metal composite ballistic testing |
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|
479 | (2) |
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8.6.1 Importance of glass content |
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479 | (1) |
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8.6.2 Commercial potential of glass-bonded SiC ceramic metal composite: lightweight vehicle armour |
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|
479 | (1) |
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8.6.3 Commercial potential of glass-bonded SiC ceramic metal composite: heavy vehicle armour |
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|
480 | (1) |
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8.7 Glass-bonded SiC ceramic metal composite as a high-impact wear-resistant ceramic |
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|
481 | (4) |
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485 | (2) |
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8.9 Statement regarding Australian Government Department of Defence Export Controls |
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|
487 | (4) |
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|
487 | (4) |
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9 SiC-Fibre Reinforced SiC Composites (SiC--SiC) |
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|
491 | (51) |
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9.1 Polymer-derived SiC ceramics |
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|
491 | (20) |
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|
492 | (1) |
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9.1.2 Polymer-derived ceramics: a paradigm shift in ceramic synthesis |
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493 | (5) |
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9.1.3 Forming of polymer-derived SiC ceramics |
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|
498 | (1) |
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9.1.4 Densification of polymer-derived SiC ceramics |
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|
498 | (1) |
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9.1.5 PDC-SiC: the sintering aid conundrum |
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|
499 | (3) |
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9.1.6 PDC-SiC: the solid solubility conundrum |
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|
502 | (4) |
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9.1.7 PDC SiC: microstructural and thermodynamic aspects |
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|
506 | (1) |
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9.1.8 PDC SiC: properties |
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|
507 | (3) |
|
9.1.9 PDC-SiC applications |
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|
510 | (1) |
|
9.2 SiC--SiC ceramic matrix composites |
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|
511 | (31) |
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|
512 | (1) |
|
9.2.2 Carbon---carbon composites |
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|
512 | (2) |
|
9.2.3 Ceramic matrix composites |
|
|
514 | (1) |
|
9.2.4 SiC fibre-reinforced alumina-matrix composites |
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|
514 | (2) |
|
9.2.5 Carbon fibre reinforced SiC |
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|
516 | (1) |
|
9.2.6 The SiC--SiC concept |
|
|
517 | (2) |
|
9.2.7 The origin of SiC fibre-reinforced SiC |
|
|
519 | (3) |
|
9.2.8 SiC-SiC synthesis via polymer infiltration pyrolysis |
|
|
522 | (8) |
|
9.2.9 SiC--SiC synthesis via chemical vapour infiltration |
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|
530 | (4) |
|
9.2.10 SiC--SiC synthesis via liquid silicon infiltration |
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|
534 | (1) |
|
9.2.11 Enhanced densification methods |
|
|
535 | (2) |
|
9.2.12 Hybrid processes for SiC--SiC ceramic matrix composites |
|
|
537 | (1) |
|
9.2.13 Oxidation-resistant surface barrier coatings |
|
|
537 | (2) |
|
9.2.14 Crack healing in SiC--SiC |
|
|
539 | (1) |
|
9.2.15 SiC--SiC conclusions |
|
|
540 | (2) |
References |
|
542 | (7) |
Index |
|
549 | |