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E-raamat: Solid-State Microwave High-Power Amplifiers

  • Formaat: 400 pages
  • Ilmumisaeg: 31-Jan-2009
  • Kirjastus: Artech House Publishers
  • ISBN-13: 9781596933200
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  • Formaat: 400 pages
  • Ilmumisaeg: 31-Jan-2009
  • Kirjastus: Artech House Publishers
  • ISBN-13: 9781596933200
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Power amplifiers are one of the most important components in microwave communication and radar systems. This practical resource offers engineers expert guidance on the critical aspects of microwave power amplifier design. This comprehensive book provides descriptions of all the major active devices, discusses large signal characterization, explains all the key circuit design procedures. Moreover, the book offers keen insight on the link between design parameters and technological implementation, helping professionals achieve optimal solutions with the most efficient utilization of available technologies. The book covers a broad range of essential topics, from requirements for high-power amplifiers, device models, phase noise and power combiners...to high-efficiency amplifiers, linear amplifier design, bias circuits, and thermal design.
Preface xi
Introduction
1(4)
Scope of This Book
1(4)
Future Developments
3(1)
References
3(2)
High-Power Amplifiers
5(12)
Applications and Specifications
5(6)
Active Devices
11(6)
References
14(3)
Physics of Active Devices
17(40)
Introduction
17(1)
Basic Concepts of Solid-State Physics
17(8)
Charge Transport in Semiconductors
25(2)
Junctions and Barriers
27(10)
FETs and MESFETs
37(8)
Heterojunction Transistors
45(12)
References
53(4)
Device Characterization and Modeling
57(20)
Introduction
57(1)
Small-Signal Characterization and Models
57(3)
MESFET and HEMT Small-Signal Model
58(1)
HBT Small-Signal Model
59(1)
Large-Signal Characterization
60(9)
Load Pull
60(6)
Large-Signal Parameters: AM/AM and AM/PM
66(1)
S-Parameters Versus Bias
67(2)
Large-Signal Models
69(8)
MESFET and HEMT Large-Signal Model
69(2)
HBT Large-Signal Model
71(3)
References
74(3)
Phase Noise
77(22)
Introduction
77(1)
Noise in Semiconductors
78(3)
Noise in Active Devices
81(6)
Phase Noise
87(2)
Phase Noise in Amplifiers
89(10)
References
96(3)
Technologies for Microwave Power Amplifiers
99(16)
Introduction
99(1)
Waveguide Components
99(1)
Microwave Integrated Circuits (MICs)
100(15)
Microwave Printed Circuits
101(1)
Hybrid Circuits
102(3)
Miniature Hybrid or Semimonolithic Ceramic Circuits
105(3)
Monolithic Circuits
108(4)
References
112(3)
Power Combiners and Dividers
115(34)
Introduction
115(1)
Balanced Stages and Quadrature Couplers
116(14)
Interdigitated Couplers
117(5)
Branch-Line Couplers
122(3)
Wilkinson Couplers, In-Phase and Quadrature
125(4)
Comparison of Three Types of Microstrip Quadrature Couplers
129(1)
180° Couplers
130(1)
Lumped-Element λ/4 Transformers
131(1)
Radial Combiners
132(10)
Microstrip Lines
132(2)
Radial Waveguides
134(6)
Conical Waveguides
140(2)
Coupler Arrays
142(7)
References
144(5)
General Power-Amplifier Design
149(32)
Introduction
149(1)
Load-Pull Design
149(1)
Broadband Matching Networks
150(5)
Bode and Fano---Theoretical Limitations on Matching
155(3)
Bandwidth vs. Power
158(5)
Load-Line Design
163(8)
Large-Signal Simulation Design: Harmonic Balance
171(2)
Potential Instabilities
173(8)
Low-Level Oscillations: Rollet's k Factor
173(2)
Internal Oscillations
175(1)
Parametric Oscillations
176(2)
Bias Oscillations
178(1)
References
179(2)
High-Efficiency Amplifiers
181(36)
Introduction
181(1)
Class A: Output Power and Efficiency Versus Load Line
181(3)
Class AB: Peak Voltage Versus Conduction Angle and Load Line
184(8)
Overdriven Amplifiers
192(13)
Class B: Optimal Efficiency and Class F
192(5)
Class B: Optimal Power
197(3)
Class A: Optimal Loading
200(3)
Class A: Optimal Power and Efficiency
203(2)
Class E
205(8)
Real Devices and Circuits
213(4)
References
214(3)
Linear Power Amplifiers
217(42)
Introduction
217(1)
Linearity
217(15)
Amplitude Distortion: Two-Tone IMD
218(4)
Real IMD Curves
222(4)
Phase Distortion: Two-Tone IMD
226(3)
Composite Amplitude and Phase Distortion
229(1)
Spectrum Asymmetry and Memory Effects
230(2)
Design Technique: Intermodulation and Power Contours
232(4)
Test Set
236(1)
A Simple Quadrature Model
237(3)
Behavioral Models
240(3)
Power and Taylor Series
241(1)
Volterra Series
242(1)
Other Miscellaneous Models
243(1)
Linearization Techniques
243(10)
Predistortion
243(7)
Feedforward Technique
250(2)
Envelope Feedback
252(1)
Channel Interference: ACPR, NPR, M-IMR
253(6)
References
255(4)
Special Power Amplifiers
259(14)
Doherty Amplifier
259(4)
Chireix Amplifier
263(5)
Kahn EER Amplifier
268(5)
References
270(3)
Bias Circuits
273(14)
Introduction
273(1)
Passive Circuit
273(3)
Broadband Voltage Followers
276(2)
Bias Supply
278(4)
Gain Stabilization Versus Temperature
279(3)
Distributed Pulsing
282(5)
References
285(2)
Thermal Design
287(18)
Introduction
287(1)
Device Life Versus Temperature
287(2)
Junction Temperature Measurements
289(6)
IR Microscopy
289(2)
Liquid Crystals
291(3)
Electrical Parameters
294(1)
Mode of Operation
295(6)
CW
296(2)
Pulse
298(3)
Heat Sinks
301(4)
References
303(2)
About the Authors 305(2)
Index 307
Franco Sechi is a co-founder Microwave Power Inc. (MPI), where he presently works as a consultant. He is a member of the editorial board of the IEEE Transactions on Microwave Theory and Techniques. Dr. Sechi holds a Ph.D. in electrical engineering from the Milan Polytechnic Institute, Italy. Marina Bujatti is a co-founder and Microwave Power Inc. (MPI), where she served as president before her retirement. She holds a Ph.D. in electrical engineering from the University of Rome, Italy.