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E-raamat: Spintronics-based Computing

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  • Formaat: PDF+DRM
  • Ilmumisaeg: 11-May-2015
  • Kirjastus: Springer International Publishing AG
  • Keel: eng
  • ISBN-13: 9783319151809
  • Formaat - PDF+DRM
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  • Formaat: PDF+DRM
  • Ilmumisaeg: 11-May-2015
  • Kirjastus: Springer International Publishing AG
  • Keel: eng
  • ISBN-13: 9783319151809

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This book provides a comprehensive introduction to spintronics-based computing for the next generation of ultra-low power/highly reliable logic. It will cover aspects from device to system-level, including magnetic memory cells, device modeling, hybrid circuit structure, design methodology, CAD tools, and technological integration methods. This book is accessible to a variety of readers and little or no background in magnetism and spin electronics are required to understand its content. The multidisciplinary team of expert authors from circuits, devices, computer architecture, CAD and system design reveal to readers the potential of spintronics nanodevices to reduce power consumption, improve reliability and enable new functionality.
Current-Induced Magnetic Switching for High-Performance Computing
1(52)
Yue Zhang
Weisheng Zhao
Wang Kang
Eyra Deng
Jacques-Olivier Klein
Dafine Revelosona
Electric Control of Magnetic Devices for Spintronic Computing
53(60)
Jianshi Tang
Qiming Shao
Pramey Upadhyaya
Pedram Khalili Amiri
Kang L. Wang
Advanced Perpendicular STT-MRAM Technologies for Power Reduction of High-performance Processors
113(32)
Naoharu Shimomura
Shinobu Fujita
Keiko Abe
Hiroki Noguchi
Hiroaki Yoda
Beyond STT-MRAM, Spin Orbit Torque RAM SOT-MRAM for High Speed and High Reliability Applications
145(14)
Guillaume Prenat
Kotb Jabeur
Gregory Di Pendina
Olivier Boulle
Gilles Gaudin
Challenge of Nonvolatile Logic LSI Using MTJ-Based Logic-in-Memory Architecture
159(20)
Takahiro Hanyu
Logic Circuits Design Based on MRAM: From Single to Multi-States Cells Storage
179(22)
Bojan Jovanovic
Raphael Martins Brum
Lionel Torres
Statistical Reliability/Energy Characterization in STT-RAM Cell Designs
201(30)
Wujie Wen
Yaojun Zhang
Yiran Chen
Synchronized Spin Torque Nano-Oscillators: From Theory to Applications
231(20)
Mehdi Kabir
Mircea Stan
Index 251
Weisheng Zhao, received the Ph.D. degree in physics from the University of Paris-Sud, France, in 2007. From 2004 to 2008, he investigated Spintronic devices based logic circuits. Since 2009, he joined the CNRS as a tenured research scientist and his interest includes the hybrid integration of nanodevices with CMOS circuit and new non-volatile memory (40 nm technology node and below) like MRAM circuit and architecture design. Weisheng has authored or co-authored more than 120 scientic papers (e.g Advanced Material, Nature Communications, >40 IEEE Transactions etc.); he is also the principal inventor of 4 international patents. Since 2014, he becomes Youth 1000 plan distinguished professor in Beihang University, Beijing, China where he leads the Spintronics Interdisciplinary Center. He is a senior member of IEEE.

Guillaume Prenat is a researcher in microelectronics now in charge of the design activity for Spintec Lab. He graduated from Grenoble Institute of Technology in France, in 2002. He obtained a PhD degree in the field of analog and mixed signal testing in 2005. He joined the spintronics laboratory SPINTEC in November 2006 to take in charge the design activity. He holds 6 international patents and has authored or co-authored 45 scientific publications in this field.