Preface |
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ix | |
Chapter 1 Sputtering Targets and Sputtered Films for the Microelectronic Industry |
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1 | (92) |
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1.1 Materials for microelectronics |
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1 | (8) |
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1 | (5) |
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6 | (1) |
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6 | (2) |
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8 | (1) |
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1.2 Scope of sputtering in microelectronics |
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9 | (4) |
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1.3 Sputtering materials for integrated circuits |
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13 | (26) |
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13 | (7) |
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20 | (3) |
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1.3.3 Conductor, liner, barrier and anti-reflection coating |
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23 | (8) |
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1.3.4 Assembly and packaging (back-end process) |
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31 | (8) |
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1.4 Sputtering materials for liquid crystal displays |
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39 | (11) |
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39 | (3) |
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1.4.2 Active-matrix liquid crystal displays |
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42 | (8) |
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1.5 Sputtering materials for magnetic storage systems |
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50 | (17) |
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50 | (3) |
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53 | (7) |
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1.5.3 Magnetic recording media |
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60 | (7) |
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1.6 Sputtering materials for optical storage media |
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67 | (6) |
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1.7 Sputtering materials for photovoltaic devices |
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73 | (11) |
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1.7.1 Silicon wafer based solar cells |
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81 | (1) |
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1.7.2 Thin film solar cells |
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82 | (2) |
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1.8 Sputtering target industry |
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84 | (2) |
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86 | (7) |
Chapter 2 Sputtering and Thin Film Deposition |
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93 | (78) |
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93 | (4) |
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2.2 Physical vapor deposition |
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97 | (5) |
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2.3 Plasma and glow discharge |
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102 | (5) |
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2.4 Sputter deposition of thin films |
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107 | (50) |
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107 | (10) |
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117 | (2) |
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2.4.3 Reactive sputtering |
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119 | (4) |
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2.4.4 Magnetron sputtering |
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123 | (34) |
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2.5 Thin film characteristics |
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157 | (9) |
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166 | (5) |
Chapter 3 Performance of Sputtering Targets and Productivity |
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171 | (26) |
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171 | (1) |
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172 | (1) |
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172 | (15) |
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3.3.1 Grain size inhomogeneity and banding of grains |
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173 | (3) |
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3.3.2 Second-phase particles, inclusions and porosity |
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176 | (1) |
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3.3.3 Preferred orientation of grains |
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177 | (4) |
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3.3.4 Sputter surface roughness and overall finish |
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181 | (2) |
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3.3.5 Particle performance |
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183 | (2) |
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3.3.6 Target bond characteristics |
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185 | (2) |
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3.4 Ferromagnetic targets |
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187 | (2) |
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3.5 Target cleaning and packaging |
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189 | (1) |
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190 | (1) |
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191 | (2) |
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193 | (4) |
Chapter 4 Sputtering Target Manufacturing |
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197 | (94) |
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197 | (1) |
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4.2 Designing sputtering targets |
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198 | (2) |
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4.3 Target material fabrication |
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200 | (66) |
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4.3.1 Liquid metallurgy processing of targets |
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200 | (15) |
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4.3.2 Powder metallurgy processing of targets |
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215 | (18) |
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4.3.3 Heat treatment and phase transformation |
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233 | (25) |
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258 | (8) |
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4.4 Machining of target and backing plate |
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266 | (6) |
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4.4.1 Turning, facing, milling and drilling |
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266 | (4) |
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270 | (2) |
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4.5 Bonding methods and bond evaluation |
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272 | (13) |
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4.5.1 Braze and solder bonding |
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272 | (3) |
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275 | (2) |
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4.5.3 Solid-state bonding |
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277 | (4) |
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4.5.4 Other types of bonding |
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281 | (2) |
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283 | (2) |
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4.6 Particle trap formation |
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285 | (1) |
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4.7 Degreasing and packaging |
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286 | (1) |
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287 | (4) |
Chapter 5 Sputtering Targets and Thin Films for Integrated Circuits |
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291 | (126) |
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291 | (1) |
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291 | (22) |
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5.2.1 Titanium processing and property control |
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295 | (8) |
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5.2.2 Titanium and titanium nitride thin films |
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303 | (10) |
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313 | (9) |
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5.3.1 Tungsten processing and property control |
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315 | (1) |
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5.3.2 Tungsten thin films |
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316 | (6) |
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5.4 Tungsten-titanium (W-Ti) alloys |
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322 | (10) |
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5.4.1 Tungsten-titanium phase diagram |
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322 | (2) |
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5.4.2 Tungsten-titanium processing and property control |
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324 | (4) |
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5.4.3 Tungsten-titanium alloy thin films |
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328 | (4) |
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5.5 Aluminum and its alloys |
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332 | (26) |
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5.5.1 Al alloy phase diagrams |
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337 | (1) |
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5.5.2 Aluminum alloy processing and property control |
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337 | (11) |
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5.5.3 Aluminum alloy thin films |
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348 | (10) |
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358 | (14) |
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5.6.1 Tantalum processing and property control |
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360 | (4) |
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5.6.2 Tantalum and TaN thin films |
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364 | (8) |
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5.7 Copper and its alloys |
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372 | (21) |
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5.7.1 Copper alloy phase diagrams |
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373 | (1) |
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5.7.2 Copper alloy processing and property control |
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374 | (6) |
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5.7.3 Copper alloy thin films |
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380 | (13) |
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5.8 Nickel-vanadium (Ni-V) alloys |
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393 | (3) |
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5.8.1 Nickel-vanadium and property control |
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395 | (1) |
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5.8.2 Nickel-vanadium alloy thin films |
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396 | (1) |
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396 | (8) |
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5.9.1 Polycide and salicide processes |
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396 | (3) |
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399 | (5) |
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404 | (13) |
Chapter 6 Sputtering Targets and Thin Films for Flat Panel Displays and Photovoltaics |
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417 | (84) |
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417 | (3) |
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6.1.1 Active matrix liquid crystal displays (AMLCDs) |
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417 | (3) |
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420 | (1) |
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6.2 Aluminum and its alloys |
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420 | (19) |
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6.2.1 Aluminum alloy phase diagrams |
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422 | (1) |
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6.2.2 Aluminum alloy processing and property control |
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423 | (3) |
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6.2.3 Aluminum alloy thin films |
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426 | (13) |
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6.3 Molybdenum and its alloys |
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439 | (12) |
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6.3.1 Molybdenum processing and property control |
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440 | (4) |
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6.3.2 Molybdenum thin films |
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444 | (7) |
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451 | (8) |
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6.4.1 Chromium processing and property control |
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451 | (4) |
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6.4.2 Chromium thin films |
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455 | (4) |
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6.5 Transparent conducting oxides (TCOs) |
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459 | (22) |
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6.5.1 Tin-doped indium-oxide (ITO) |
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462 | (11) |
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6.5.2 Aluminum-doped zinc oxide (AZO) |
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473 | (8) |
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6.6 Absorbers for photovoltaics |
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481 | (10) |
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6.6.1 Cu(In,Ga)Se2 (CIGS) |
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481 | (6) |
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487 | (4) |
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491 | (10) |
Chapter 7 Ferromagnetic Sputtering Targets and Thin Films for Silicides and Data Storage |
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501 | (66) |
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501 | (10) |
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7.1.1 Magnetic properties of materials |
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501 | (6) |
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7.1.2 Magnetic domain structure and hysteresis of magnetic materials |
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507 | (3) |
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7.1.3 Soft and hard magnetic materials |
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510 | (1) |
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7.2 Nickel and its alloys |
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511 | (14) |
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7.2.1 Processing steps and property control |
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513 | (9) |
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7.2.2 Sputtering of nickel and thin film properties |
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522 | (3) |
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7.3 Cobalt and its alloys |
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525 | (15) |
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7.3.1 Processing steps and property control |
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527 | (8) |
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7.3.2 Sputtering of cobalt and thin film properties |
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535 | (5) |
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540 | (12) |
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7.5 Media for data storage |
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552 | (9) |
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7.5.1 Longitudinal recording media |
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556 | (2) |
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7.5.2 Perpendicular recording media |
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558 | (3) |
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561 | (6) |
Chapter 8 Troubleshooting in Sputter Deposition |
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567 | (26) |
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567 | (1) |
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8.2 Long bum-in of sputtering target |
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568 | (7) |
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8.2.1 Inhomogeneous material |
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569 | (3) |
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8.2.2 Surface characteristics |
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572 | (3) |
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8.3 In-film defect generation |
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575 | (12) |
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8.3.1 Flaking of nodules from the sputtering target |
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575 | (1) |
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8.3.2 Flaking of brittle films from the process kit |
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576 | (2) |
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578 | (7) |
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8.3.4 Trace elements of sputtering target |
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585 | (1) |
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8.3.5 Re-deposited material in hollow cathode magnetron (HCM) targets |
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586 | (1) |
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8.3.6 Contaminated particle-traps of the sputtering targets |
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587 | (1) |
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8.4 Bonding-related problems |
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587 | (3) |
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8.5 Long pump-down time and out-gassing |
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590 | (1) |
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590 | (3) |
Index |
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593 | |