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Vertical-Cavity Surface-Emitting Laser: Introduction and Review |
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1 | (30) |
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Why the Surface Emitting Laser? |
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1 | (2) |
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Fundamental Laser Characteristics |
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3 | (4) |
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3 | (3) |
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Power Output and Efficiency |
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6 | (1) |
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Criteria for Confirmation of Lasing |
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7 | (1) |
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Material and Device Structure |
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7 | (4) |
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7 | (1) |
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7 | (1) |
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8 | (1) |
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9 | (1) |
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Resonant Mode of Surface-Emitting Laser |
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10 | (1) |
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11 | (1) |
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Surface Emitting Laser in Long Wavelength Region |
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11 | (3) |
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11 | (2) |
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AlGaInAs / AlGaInAs SE Laser |
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13 | (1) |
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14 | (1) |
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Surface-Emitting Laser in Mid-Wavelength Region |
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14 | (5) |
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0.98 μm GaInAs / GaAs SE Laser |
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14 | (3) |
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0.98 μm GaInAs / GaAs SE Laser on GaAs (311) Substrate |
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17 | (2) |
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Surface-Emitting Lasers in Near-Infrared and Red Spectral Regions |
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19 | (1) |
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0.85 μm GaAlAs / GaAs SE Laser |
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19 | (1) |
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0.78 μm GaAlAs / GaAs SE Laser |
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20 | (1) |
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20 | (1) |
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Surface-Emitting Lasers in Green--Blue--UV Spectral Regions |
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20 | (1) |
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Ultimate Characteristics and Technologies for Innovation |
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21 | (3) |
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21 | (2) |
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23 | (1) |
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Photonic Integration Based on VCSELs |
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24 | (1) |
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25 | (1) |
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26 | (5) |
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27 | (4) |
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Physics of the Gain Medium in Vertical-Cavity Surface-Emitting Semiconductor Lasers |
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31 | (22) |
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32 | (3) |
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Semiclassical Laser Theory |
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35 | (1) |
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Semiconductor Bloch Equations |
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36 | (4) |
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Bandstructure Calculations |
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40 | (4) |
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44 | (6) |
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50 | (3) |
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51 | (2) |
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Operating Principles of VCSELs |
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53 | (46) |
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Basic Properties of VCSELs |
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54 | (12) |
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Relative Confinement Factor |
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55 | (1) |
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56 | (3) |
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Threshold Gain and Photon Lifetime |
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59 | (1) |
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Matrix Method and Standing-Wave Pattern |
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60 | (2) |
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Energy Flux and Differential Quantum Efficiency |
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62 | (3) |
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65 | (1) |
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Emission Characteristics of Oxide-Confined VCSELs |
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66 | (11) |
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67 | (1) |
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Experimental Operating Characteristics |
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67 | (2) |
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69 | (4) |
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73 | (4) |
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Dynamic and Noise Behavior |
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77 | (9) |
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78 | (1) |
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Small-Signal Modulation Response |
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79 | (4) |
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83 | (2) |
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85 | (1) |
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VCSEL Based Optical Interconnects |
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86 | (6) |
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87 | (1) |
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Large-Signal Modulation Effects |
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88 | (1) |
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High-Speed Optical Data Transmission |
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88 | (4) |
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92 | (7) |
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93 | (6) |
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Band Engineering of the Polarization and Gain Properties in VCSELs |
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99 | (36) |
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100 | (17) |
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Anisotropy of Valence Band Structures in Non-(001)-Oriented QW Layers |
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100 | (3) |
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Polarization Control Through the Anisotropic Gain |
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103 | (4) |
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Anisotropic Gains in Wurtzite-GaN Crystals |
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107 | (5) |
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Anisotropic Gains in Zinc Blende--GaN Crystals |
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112 | (5) |
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117 | (13) |
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Review of Experimental Work |
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117 | (3) |
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Optical Anisotropy of (n11)-Oriented QWs |
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120 | (2) |
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Polarization Characteristics of (n11)-Oriented VCSELs |
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122 | (8) |
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130 | (5) |
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131 | (4) |
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Three-Dimensional Simulation of Vertical-Cavity Surface-Emitting Semiconductor Lasers |
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135 | (58) |
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136 | (2) |
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138 | (8) |
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146 | (4) |
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150 | (1) |
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Interactions Between Physical Phenomena |
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151 | (1) |
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3D Modeling of Decoupled Optical, Electrical or Thermal Problems |
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152 | (11) |
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152 | (9) |
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161 | (1) |
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162 | (1) |
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3D Electro-Optical, Electro-Thermal or Opto-Thermal Simulations |
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163 | (10) |
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Electro-Optical Simulation |
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163 | (5) |
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Electro-Thermal Simulation |
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168 | (5) |
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173 | (1) |
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Complete Electro-Opto-Thermal Simulation |
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173 | (7) |
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180 | (13) |
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180 | (13) |
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Modeling the Dynamics of VCSELs |
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193 | (34) |
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Basic Equations of VCSELs |
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194 | (4) |
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194 | (1) |
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Rate Equation of Carrier Concentration inside the Active and Spacer Layers |
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195 | (1) |
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Gain Spectrum, Induced Refractive Index Change and Spontaneous Emission Rate |
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196 | (2) |
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One Dimensional Approximation of VCSELs |
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198 | (11) |
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One Dimensional Approximation of Wave Equations |
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198 | (1) |
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Description of Waves in Bragg Reflectors Using the Scattering Matrix |
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199 | (1) |
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200 | (4) |
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Self-Consistent Calculation |
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204 | (1) |
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205 | (4) |
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Quasi-Three-Dimensional Approximation of VCSELs |
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209 | (3) |
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Quasi-Three-Dimensional Approximation of Wave Equations |
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209 | (1) |
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210 | (1) |
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211 | (1) |
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Improved Dynamic Models of VCSELs |
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212 | (11) |
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Increase of Propagation Distance by Using the Time-Dependent Transfer Matrix |
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213 | (2) |
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Light Diffraction at the Interface of Dielectric Layers--Bessel Transform |
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215 | (2) |
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Light Diffraction inside the Dielectric Layers -- Wide-Angle Beam Propagation Method |
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217 | (2) |
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219 | (4) |
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Discussion and Conclusion |
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223 | (4) |
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224 | (3) |
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Low-Power Vertical-Cavity Surface-Emitting Lasers and Microcavity Light-Emitting Diodes Based on Apertured-Microcavities |
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227 | (32) |
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Optical Modes in Planar and Dielectrically-Apertured Fabry-Perot Microcavities and the Oxide-Confined VCSEL |
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228 | (12) |
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Oxide-Confined VCSELs with Quantum-Dot Active Regions |
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240 | (3) |
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Microcavity Light Emitters Based on Quantum Dots and Oxide-Apertures |
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243 | (10) |
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253 | (6) |
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254 | (5) |
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Cavity and Mirror Design for Vertical-Cavity Surface-Emitting Lasers |
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259 | (44) |
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260 | (23) |
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All-Semiconductor Mirrors |
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262 | (1) |
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263 | (1) |
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Mirrors for Long-Wavelength VCSELs |
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264 | (1) |
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DBRs Augmented by Metallic Multilayers |
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265 | (1) |
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Matrix-Theory for Abrupt Interface and Graded-Interface DBRs |
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266 | (3) |
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Periodic Structure of DBR Mirrors |
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269 | (2) |
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Two-Material Periodic DBR Mirror with Abrupt Interfaces |
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271 | (9) |
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Two-Material Periodic Mirror with Graded Interfaces |
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280 | (3) |
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283 | (3) |
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Lasing Threshold and Modal Guiding in VCSELs |
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286 | (7) |
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Relationship Between the Relative Intensity Noise (RIN) and the Cavity Geometry |
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289 | (4) |
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293 | (10) |
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293 | (10) |
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1.3 and 1.55 μm Vertical-Cavity Surface-Emitting Lasers |
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303 | (20) |
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Special Issues for 1.3 and 1.55 μm VCSELs |
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303 | (20) |
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320 | (3) |
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Application of VCSELs to Radiation-Tolerant Optical Data Links |
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323 | (20) |
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325 | (1) |
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Optical Link Specifications for ATLAS |
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326 | (1) |
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327 | (6) |
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328 | (4) |
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332 | (1) |
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333 | (1) |
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Design and Performance of the Inner-Detector Links |
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333 | (3) |
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Design and Performance of the Electromagnetic Calorimeter Links |
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336 | (3) |
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339 | (4) |
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340 | (3) |
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Progress in Blue and Near-Ultraviolet Vertical-Cavity Emitters: A Status Report |
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343 | (24) |
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Optical Gain in Blue / NUV InGaN Quantum Wells |
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344 | (6) |
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Strategies and Approaches to Vertical-Cavity Blue and Near-Ultraviolet Emitters |
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350 | (14) |
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Optical Resonator Design and Fabrication: Demonstration of Optically-Pumped VCSEL Operation in 380--410 nm Range |
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351 | (8) |
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Electrical Injection: Demonstration Resonant-Cavity Light-Emitting Diodes |
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359 | (5) |
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364 | (3) |
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364 | (3) |
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Long-Wavelength InP-Based VCSELs |
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367 | (16) |
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369 | (5) |
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374 | (4) |
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378 | (5) |
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380 | (3) |
Index |
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383 | |