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E-raamat: Silicon Photonics for Telecommunications and Biomedicine

Edited by , Edited by (University of California, Los Angeles, USA University of California at Los Angeles, USA University of California at Los Angeles, USA Univ of Calif, Los Angeles, California, USA)
  • Formaat: 444 pages
  • Ilmumisaeg: 19-Apr-2016
  • Kirjastus: CRC Press Inc
  • Keel: eng
  • ISBN-13: 9781040220184
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  • Formaat: 444 pages
  • Ilmumisaeg: 19-Apr-2016
  • Kirjastus: CRC Press Inc
  • Keel: eng
  • ISBN-13: 9781040220184
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"Focusing on the important obstacles to be met in order to make silicon photonics a viable commercial reality, this book provides a concise introduction to major developments in the field. Worldwide experts provide clear explanations of the fundamentals and state-of-the-art approaches. After a historical review, the text discusses the critical areas of silicon wire waveguides and optical parametric effects in silicon, stress and piezoelectric tuning of silicon's optical properties, and short pulse techniques in silicon photonics. It also addresses silicon-based optical resonators, mid-wavelength infrared applications, growth techniques, hybrid lasers on silicon, and energy harvesting. "--

"Today, silicon photonics, the technology for building low-cost and complex optics on a chip, is a thriving community and a blossoming business. The roots of this promising new technology date back to the late 1980s and early 1990s to the work of Soref, Peterman, and others. There were three early findings that paved the path for much of the subsequent progress. First, it was recognized that micrometer-size waveguides, compatible with the CMOS technology of the time, could be realized despite the large refractive index difference between silicon and silicon dioxide (SiO2). Previously, this large refractive index was thought to result in multimode waveguides that are undesirable for building useful interferometric devices such as directional coupler, Mach-Zehnder modulators, and so on. Although, today's submicron (nanophotonic) waveguides are routinely realized and desired for their more efficient use of wafer real estate, the advance fabrication capability needed to fabricate such structures was not widely available to photonic device researchers. Second, it was proposed by Soref that by modulating the free-carrier density, which can be done easily with a diode or a transistor, electro-optic switching can be achieved through the resulting electroabsorption and electrorefraction effects. Third, it was shown that infrared photodectors operating in the telecommunication band centered at 1550 nm can be monolithically integrated onto silicon chips using strained layer GeSi (and eventually Ge) grown directly on silicon. The potential for creating low cost photonics using the silicon CMOS chip manufacturing infrastructure was gradually recognized by the photonics research and business community in the late 1990s and early 2000s"--

Electrical engineers complement rather than replace earlier studies of the technology for building low-cost and complex optics in a chip. Balancing theory and experiment with current and future trends, they consider such topics as silicon plasmonic waveguides, stress and piezoelectric tuning of silicon's optical properties, silicon photonics for biosensing applications, mid-wavelength infrared silicon photonics for high-power and biomedical applications, and nonlinear photovoltaics and energy harvesting. Annotation ©2012 Book News, Inc., Portland, OR (booknews.com)

Given silicon’s versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics.

With contributions from world experts, this reference guides readers through fundamental principles and focuses on crucial advances in making commercial use of silicon photonics a viable reality in the telecom and biomedical industries. Taking into account existing and anticipated industrial directions, the book balances coverage of theory and practical experimental research to explore solutions for obstacles to the viable commercialization of silicon photonics.

The book’s special features include:

  • A section on silicon plasmonic waveguides
  • Detailed coverage of novel III-V applications
  • A chapter on 3D integration
  • Discussion of applications for energy harvesting/photovoltaics

This book reviews the most important technological trends and challenges. It presents topics involving major silicon photonics applications in telecommunications, high-power photonics, and biomedicine. It includes discussion of silicon plasmonic waveguides, piezoelectric tuning of silicon’s optical properties, and applications of two-photon absorption. Expert authors with industry research experience examine the challenge of hybridizing III-V compound semiconductors on silicon to achieve monolithic light sources. They also address economic compatibility and heat dissipation issues in CMOS chips, challenges in designing electronic photonics integrated circuits, and the need for standardization in computer-aided design of industrial chips.

This book gives an authoritative summary of the latest research in this emerging field, covering key topics for readers from various disciplines with an interest in integrated photonics.

Chapter 1 Silicon Photonics-The Evolution of Integration 1(50)
Graham T. Reed
William R. Headley
Goran Z. Mashanovich
Frederic Y. Gardes
David J. Thomson
Milan M. Milosevic
1.1 Introduction
1(4)
1.2 A Brief History of Silicon Photonics Integration
5(17)
1.3 Current Challenges
22(13)
1.4 The Future of Integration
35(4)
1.5 Conclusions
39(1)
References
40(11)
Chapter 2 Silicon Plasmonic Waveguides 51(26)
Richard Soref
Sang-Yeon Cho
Walter Buchwald
Robert E. Peale
Justin Cleary
2.1 Introduction
52(1)
2.2 Plasmonic Materials for High-Volume Manufacture
53(1)
2.3 Plasmonic Structures for Normal-Incidence Free-Space Use
54(1)
2.4 Low Loss Group IV Plasmonic Waveguide Structures
54(3)
2.4.1 Plasmonic Definitions
54(1)
2.4.2 Launching and Detecting LRSPPs
55(1)
2.4.3 Waveguide Geometries
55(1)
2.4.4 The Complex Permittivity of Conductors
56(1)
2.5 Waveguide Modeling and Simulation
57(13)
2.5.1 The Unsymmetric CD Structure
57(5)
2.5.2 The Symmetric CDC Channel Waveguide
62(2)
2.5.3 The New Buried-Ribbon DCD Channel Waveguide
64(2)
2.5.5 Waveguiding in 2D Plasmonic Crystals
66(1)
2.5.6 Plasmonic Waveguide Devices (Including "Actives")
67(1)
2.5.7 Subwavelength Cross Section of the Plasmonic Mode
67(2)
2.5.8 Surface Phonon Polariton (SPnP) Waveguides
69(1)
2.6 Chip-Scale Plasmo-Opto-Electronic Integration
70(2)
2.6.1 System in a Cube
70(1)
2.6.2 3D Chip Construction
70(1)
2.6.3 The Cube's Layout
71(1)
2.7 Conclusions
72(1)
Acknowledgment
73(1)
References
74(3)
Chapter 3 Stress and Piezoelectric Tuning of Silicon's Optical Properties 77(30)
Kevin K. Tsia
Sasan Fathpour
Bahram Jalali
3.1 Introduction
77(3)
3.2 Piezoelectric-Transducer-Integrated Silicon Waveguides
80(6)
3.2.1 PZT Transducer Design
80(3)
3.2.2 Fabrication and Characterization of PZT-Integrated SOI Waveguides
83(3)
3.3 Active Tuning of Birefringence in Silicon Waveguides by Piezoelectricity
86(2)
3.4 Active Control of Parametric Processes in Silicon Waveguides by Piezoelectricity
88(7)
3.5 Periodically Poled Silicon (PePSi)
95(7)
3.5.1 Concepts and Designs
95(4)
3.5.2 MWIR Generation in PePSi
99(3)
3.6 Conclusions
102(1)
References
103(4)
Chapter 4 Pulse Shaping and Applications of Two-Photon Absorption 107(24)
Ozdal Boyraz
4.1 Two-Photon Absorption and Free Carriers
107(12)
4.1.1 Physics of TPA and Free Carrier Plasma Effect
108(7)
4.1.2 Active Carrier Sweeping and Reduced Carrier Lifetime
115(4)
4.2 Two-Photon Absorption and Free Carriers in Nonlinear Silicon Optics
119(6)
4.2.1 Optical Pulse Shaping Applications of TPA and FCA
119(6)
4.3 Conclusion
125(1)
References
126(5)
Chapter 5 Theory of Silicon Raman Amplifiers and Lasers 131(70)
Michael Krause
Hagen Renner
Ernst Brinkmeyer
5.1 Introduction
132(1)
5.2 Fundamentals
133(22)
5.2.1 Spectral Amplitudes
134(2)
5.2.2 Nonlinear Perturbation
136(3)
5.2.3 Single-Mode Approximation
139(1)
5.2.4 Material Parameters and Effective Areas
140(6)
5.2.4.1 General Structure of Susceptibility Tensor x(31
141(1)
5.2.4.2 Electronic Contribution to X(3)
142(2)
5.2.4.3 Raman Contribution to X(3)
144(1)
5.2.4.4 Nonreciprocal Raman Gain in Silicon Waveguides
145(1)
5.2.5 Power-Evolution Equations
146(1)
5.2.6 Incorporation of Free-Carrier Absorption
147(7)
5.2.6.1 Optical Absorption due to Free Carriers
147(2)
5.2.6.2 Constant-Carrier-Density Approximation
149(2)
5.2.6.3 Total Carrier Generation Rate
151(2)
5.2.6.4 Relation to Conventional Models
153(1)
5.2.7 Summary: Model for Continuous-Wave Operation
154(1)
5.3 Amplifiers
155(24)
5.3.1 Single-Pass Pumping in the Absence of Nonlinear Absorption
156(2)
5.3.2 Single-Pass Pumping in the Presence of TPA
158(3)
5.3.3 Single-Pass Pumping in the Presence of TPA and FCA
161(6)
5.3.3.1 Numerical Simulation
162(1)
5.3.3.2 Explicit Analytical Optimization
163(4)
5.3.4 Rina-Resonator Enhancement of the Pump Power
167(3)
5.3.4.1 Optimal RR-SRAs in the Presence of TPA and FCA
167(2)
5.3.4.2 Optimal RR-SRAs in the Absence of Nonlinear Absorption
169(1)
5.3.5 Cladding-Pumped Amplifiers
170(4)
5.3.6 Approaches for Reducing FCA
174(1)
5.3.7 Raman Isolators
175(2)
5.3.8 Non-CW Operation
177(2)
5.4 Lasers
179(16)
5.4.1 Basic Model
179(4)
5.4.1.1 Operating Principle
179(1)
5.4.1.2 Boundary Conditions
180(1)
5.4.1.3 Numerical Simulation
181(2)
5.4.2 Basic Properties of Silicon Raman Lasers
183(3)
5.4.2.1 Lasing Threshold
183(2)
5.4.2.2 Input-Output Characteristics
185(1)
5.4.3 Cascaded Fabry–Perot Lasers
186(6)
5.4.3.1 Model
187(3)
5.4.3.2 Conversion Efficiency versus Lifetime and Pump Wavelength
190(2)
5.4.4 Cascaded Ring Lasers
192(3)
References
195(6)
Chapter 6 Silicon Photonics for Biosensing Applications 201(30)
Jenifer L. Lawrie
Sharon M. Weiss
6.1 Introduction
202(1)
6.2 Bioreceptors
203(2)
6.2.1 Antibody/Antigen
203(1)
6.2.2 Enzymes
203(1)
6.2.3 Nucleic Acids
204(1)
6.2.4 Cellular Structures
205(1)
6.3 Surface Chemistry and Passivation for Biosensing
205(2)
6.4 Optical Reflectance Transducers in Porous Silicon
207(9)
6.4.1 Single-Layer Thin Films
209(2)
6.4.2 Bragg Mirrors
211(1)
6.4.3 Microcavities
211(1)
6.4.4 Rugate Filters
212(3)
6.4.5 Waveguides
215(1)
6.5 Optical Reflectance Transducers in Other Silicon Nanostructures
216(4)
6.5.1 Ring Resonators
216(2)
6.5.2 Slot Waveguides
218(1)
6.5.3 2D Silicon Photonic Crystals
218(2)
6.6 Intensity Measurements with Mach–Zehnder Interferometers
220(1)
6.7 Photoluminescence Transducers
221(1)
6.8 Conclusions
222(1)
Acknowledgment
222(3)
References
225(6)
Chapter 7 Mid-Wavelength Infrared Silicon Photonics for High-Power and Biomedical Applications
Varun Raghunathan
Sasan Fathpour
Bahram Jalali
7.1 Introduction
231(3)
7.2 The Case for MWIR Silicon Devices
234(2)
7.3 Design Considerations
236(2)
7.4 MWIR Nonlinear Silicon Devices
238(10)
7.4.1 Raman Amplification
239(3)
7.4.2 Multimode Raman Image Amplifier
242(3)
7.4.3 Design of Cascaded Raman Lasers
245(2)
7.4.4 Other Parametric Nonlinear Effects
247(1)
7.5 Biomedical Applications
248(2)
7.6 Conclusions
250(1)
References
251(4)
Chapter 8 Novel III-V on Silicon Growth Techniques 255(42)
Diana L. Huffaker
Jun Tatebayashi
8.1 Introduction
256(5)
8.2 Growth and Interface Characterization of the Interfacial Misfit Array
261(24)
8.2.1 Theory of Mismatched Growth
261(2)
8.2.2 Burgers Vector and Types of Misfit Dislocations
263(2)
8.2.3 An Alternative Mechanism for High-Quality Mismatched Growth
265(1)
8.2.4 Interfacial Misfit Dislocation Array-Based Nucleation of GaSb on GaAs
266(5)
8.2.5 Interfacial Array of Misfit Dislocations: A Self-Assembly Process
271(2)
8.2.6 Modeling an Interfacial Array of Misfit Dislocations Using Molecular Mechanics
273(6)
8.2.7 Growth of III-V on Si
279(2)
8.2.8 Growth and Atomic-Force Microscope and Transmission Electron Microscope Analyses of the IMF Array
281(3)
8.2.9 TEM Analyses of the IMF Array
284(1)
8.3 Fabrication and Device Characteristics of Electrically Injected GaSb-AIGaSb Edge Emitters on Si Substrate
285(5)
8.3.1 Introduction
285(1)
8.3.2 Growth of Device Structures
286(1)
8.3.3 Etch-Pit Density Characterization of Laser Structures
286(3)
8.3.4 Device Characterization at 77 K
289(1)
8.4 Summary
290(1)
References
291(6)
Chapter 9 Hybrid III-V Lasers on Silicon 297(44)
Jun Yang
Zetian Mi
Pallab Bhattacharya
9.1 Introduction
298(3)
9.1.1 Need for Si Photonics
298(1)
9.1.2 Different Techniques Usea for Si Photonics
298(2)
9.1.3 Direct Growth of GaAs-Based Lasers on Si
300(1)
9.2 Review of the Recent Developments of III-V Lasers on Si
301(3)
9.3 Growth of Device Quality Quantum Dots on GaAs and Si
304(2)
9.4 Multilayer Self-Organized Quantum Dot Dislocation Filters
306(7)
9.4.1 Design of Quantum Dot Dislocation Filters
307(2)
9.4.2 Transmission Electron Microscopy Characterization
309(2)
9.4.3 Photoluminescence Characterization
311(2)
9.5 Self-Organized InGaAs/GaAs Quantum Dot Lasers on Si
313(3)
9.5.1 Laser Structure, Growth, and Fabrication
313(1)
9.5.2 DC and Small-Signal Modulation Characteristics of Quantum Dot Lasers on Si
314(2)
9.6 III-V Integrated Guided-Wave Devices on Si
316(10)
9.6.1 Model
318(1)
9.6.2 FIB Etched Facets as Cavity Mirrors and Coupling Grooves
319(1)
9.6.3 Integrated Quantum Dot Lasers and Quantum Well Electroabsorption Modulators on Si
319(3)
9.6.4 Integration of Quantum Dot Lasers with Si Waveguides on a Si Platform
322(4)
9.7 Future Prospects
326(3)
9.8 Summary
329(1)
References
329(12)
Chapter 10 Three-Dimensional Integration of CMOS and Photonics 341(22)
Prakash Koonath
Tejaswi Indukuri
Bahram Jalali
10.1 Introduction
341(2)
10.2 SIMOX 3D Sculpting
343(2)
10.2.1 Process of SIMOX 3D Sculpting
343(1)
10.2.2 Fabrication of 3D Integrated Optical Devices
344(1)
10.3 Device Characteristics of 3D Integrated Optical Devices
345(7)
10.3.1 Vertically Coupled Microresonators
345(2)
10.3.2 Add-Drop Multiplexers
347(2)
10.3.3 Multipole Filters Based on Microresonators
349(3)
10.4 Monolithic Integration of Photonics and Electronics in 3D
352(3)
10.5 Multilayer 3D Devices
355(4)
10.6 Discussion and Summary
359(1)
Acknowledgments
359(1)
References
360(3)
Chapter 11 Nonlinear Photovoltaics and Energy Harvesting 363(20)
Sasan Fathpour
Kevin K. Tsia
Bahram Jalali
11.1 The Need for Green Integrated Photonics
363(3)
11.2 Nonlinear Optical Losses in Integrated Photonics
366(4)
11.3 Two-Photon Photovoltaic Effect
370(2)
11.4 Nonlinear Photovoltaic Effect in Active Silicon Photonic Devices
372(2)
11.5 Efficiency of the Two-Photon Photovoltaic Effect
374(2)
11.6 Other Applications
376(3)
11.7 Conclusion
379(1)
References
379(4)
Chapter 12 Computer-Aided Design for CMOS Photonics 383(34)
Attila Mekis
Daniel Kucharski
Gianlorenzo Masini
Thierry Pinguet
12.1 Introduction
383(2)
12.2 The Electronic Design Flow and EDA
385(2)
12.3 CMOS Photonics Process Technology
387(2)
12.4 Photonic Device Libraries
389(3)
12.5 CMOS Photonics Design Deck
392(16)
12.5.1 Photonic Devices in a CMOS Design Environment
392(2)
12.5.2 DRC
394(1)
12.5.3 LVS
395(2)
12.5.4 Simulating Optical Systems
397(2)
12.5.5 Behavioral Models Using Verilog-A
399(9)
12.6 Designing Optoelectronic Subsystems and Systems
408(4)
12.6.1 High-Speed Integrated Receiver
408(1)
12.6.2 High-Speed Integrated Transmitter
409(1)
12.6.3 Integrated Control
410(1)
12.6.4 A 40 Gb/s Transceiver Chip
410(2)
12.7 Summary
412(2)
References
414(3)
Index 417
Bahram Jalali is a professor of electrical engineering at the University of California, Los Angeles.





Sasan Fathpour is an assistant professor in the College of Optics and Photonics at the University of Central Florida.