Chapter 1 Silicon Photonics-The Evolution of Integration |
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1 | (50) |
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1 | (4) |
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1.2 A Brief History of Silicon Photonics Integration |
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5 | (17) |
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22 | (13) |
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1.4 The Future of Integration |
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35 | (4) |
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39 | (1) |
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40 | (11) |
Chapter 2 Silicon Plasmonic Waveguides |
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51 | (26) |
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52 | (1) |
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2.2 Plasmonic Materials for High-Volume Manufacture |
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53 | (1) |
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2.3 Plasmonic Structures for Normal-Incidence Free-Space Use |
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54 | (1) |
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2.4 Low Loss Group IV Plasmonic Waveguide Structures |
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54 | (3) |
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2.4.1 Plasmonic Definitions |
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54 | (1) |
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2.4.2 Launching and Detecting LRSPPs |
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55 | (1) |
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2.4.3 Waveguide Geometries |
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55 | (1) |
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2.4.4 The Complex Permittivity of Conductors |
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56 | (1) |
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2.5 Waveguide Modeling and Simulation |
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57 | (13) |
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2.5.1 The Unsymmetric CD Structure |
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57 | (5) |
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2.5.2 The Symmetric CDC Channel Waveguide |
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62 | (2) |
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2.5.3 The New Buried-Ribbon DCD Channel Waveguide |
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64 | (2) |
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2.5.5 Waveguiding in 2D Plasmonic Crystals |
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66 | (1) |
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2.5.6 Plasmonic Waveguide Devices (Including "Actives") |
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67 | (1) |
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2.5.7 Subwavelength Cross Section of the Plasmonic Mode |
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67 | (2) |
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2.5.8 Surface Phonon Polariton (SPnP) Waveguides |
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69 | (1) |
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2.6 Chip-Scale Plasmo-Opto-Electronic Integration |
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70 | (2) |
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70 | (1) |
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2.6.2 3D Chip Construction |
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70 | (1) |
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71 | (1) |
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72 | (1) |
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73 | (1) |
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74 | (3) |
Chapter 3 Stress and Piezoelectric Tuning of Silicon's Optical Properties |
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77 | (30) |
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77 | (3) |
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3.2 Piezoelectric-Transducer-Integrated Silicon Waveguides |
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80 | (6) |
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3.2.1 PZT Transducer Design |
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80 | (3) |
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3.2.2 Fabrication and Characterization of PZT-Integrated SOI Waveguides |
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83 | (3) |
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3.3 Active Tuning of Birefringence in Silicon Waveguides by Piezoelectricity |
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86 | (2) |
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3.4 Active Control of Parametric Processes in Silicon Waveguides by Piezoelectricity |
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88 | (7) |
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3.5 Periodically Poled Silicon (PePSi) |
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95 | (7) |
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3.5.1 Concepts and Designs |
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95 | (4) |
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3.5.2 MWIR Generation in PePSi |
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99 | (3) |
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102 | (1) |
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103 | (4) |
Chapter 4 Pulse Shaping and Applications of Two-Photon Absorption |
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107 | (24) |
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4.1 Two-Photon Absorption and Free Carriers |
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107 | (12) |
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4.1.1 Physics of TPA and Free Carrier Plasma Effect |
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108 | (7) |
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4.1.2 Active Carrier Sweeping and Reduced Carrier Lifetime |
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115 | (4) |
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4.2 Two-Photon Absorption and Free Carriers in Nonlinear Silicon Optics |
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119 | (6) |
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4.2.1 Optical Pulse Shaping Applications of TPA and FCA |
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119 | (6) |
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125 | (1) |
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126 | (5) |
Chapter 5 Theory of Silicon Raman Amplifiers and Lasers |
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131 | (70) |
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132 | (1) |
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133 | (22) |
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5.2.1 Spectral Amplitudes |
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134 | (2) |
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5.2.2 Nonlinear Perturbation |
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136 | (3) |
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5.2.3 Single-Mode Approximation |
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139 | (1) |
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5.2.4 Material Parameters and Effective Areas |
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140 | (6) |
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5.2.4.1 General Structure of Susceptibility Tensor x(31 |
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141 | (1) |
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5.2.4.2 Electronic Contribution to X(3) |
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142 | (2) |
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5.2.4.3 Raman Contribution to X(3) |
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144 | (1) |
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5.2.4.4 Nonreciprocal Raman Gain in Silicon Waveguides |
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145 | (1) |
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5.2.5 Power-Evolution Equations |
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146 | (1) |
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5.2.6 Incorporation of Free-Carrier Absorption |
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147 | (7) |
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5.2.6.1 Optical Absorption due to Free Carriers |
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147 | (2) |
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5.2.6.2 Constant-Carrier-Density Approximation |
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149 | (2) |
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5.2.6.3 Total Carrier Generation Rate |
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151 | (2) |
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5.2.6.4 Relation to Conventional Models |
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153 | (1) |
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5.2.7 Summary: Model for Continuous-Wave Operation |
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154 | (1) |
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155 | (24) |
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5.3.1 Single-Pass Pumping in the Absence of Nonlinear Absorption |
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156 | (2) |
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5.3.2 Single-Pass Pumping in the Presence of TPA |
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158 | (3) |
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5.3.3 Single-Pass Pumping in the Presence of TPA and FCA |
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161 | (6) |
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5.3.3.1 Numerical Simulation |
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162 | (1) |
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5.3.3.2 Explicit Analytical Optimization |
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163 | (4) |
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5.3.4 Rina-Resonator Enhancement of the Pump Power |
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167 | (3) |
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5.3.4.1 Optimal RR-SRAs in the Presence of TPA and FCA |
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167 | (2) |
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5.3.4.2 Optimal RR-SRAs in the Absence of Nonlinear Absorption |
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169 | (1) |
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5.3.5 Cladding-Pumped Amplifiers |
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170 | (4) |
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5.3.6 Approaches for Reducing FCA |
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174 | (1) |
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175 | (2) |
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177 | (2) |
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179 | (16) |
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179 | (4) |
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5.4.1.1 Operating Principle |
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179 | (1) |
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5.4.1.2 Boundary Conditions |
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180 | (1) |
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5.4.1.3 Numerical Simulation |
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181 | (2) |
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5.4.2 Basic Properties of Silicon Raman Lasers |
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183 | (3) |
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183 | (2) |
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5.4.2.2 Input-Output Characteristics |
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185 | (1) |
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5.4.3 Cascaded Fabry–Perot Lasers |
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186 | (6) |
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187 | (3) |
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5.4.3.2 Conversion Efficiency versus Lifetime and Pump Wavelength |
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190 | (2) |
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5.4.4 Cascaded Ring Lasers |
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192 | (3) |
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195 | (6) |
Chapter 6 Silicon Photonics for Biosensing Applications |
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201 | (30) |
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202 | (1) |
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203 | (2) |
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203 | (1) |
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203 | (1) |
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204 | (1) |
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6.2.4 Cellular Structures |
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205 | (1) |
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6.3 Surface Chemistry and Passivation for Biosensing |
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205 | (2) |
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6.4 Optical Reflectance Transducers in Porous Silicon |
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207 | (9) |
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6.4.1 Single-Layer Thin Films |
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209 | (2) |
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211 | (1) |
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211 | (1) |
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212 | (3) |
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215 | (1) |
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6.5 Optical Reflectance Transducers in Other Silicon Nanostructures |
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216 | (4) |
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216 | (2) |
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218 | (1) |
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6.5.3 2D Silicon Photonic Crystals |
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218 | (2) |
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6.6 Intensity Measurements with Mach–Zehnder Interferometers |
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220 | (1) |
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6.7 Photoluminescence Transducers |
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221 | (1) |
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222 | (1) |
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222 | (3) |
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225 | (6) |
Chapter 7 Mid-Wavelength Infrared Silicon Photonics for High-Power and Biomedical Applications |
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231 | (3) |
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7.2 The Case for MWIR Silicon Devices |
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234 | (2) |
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7.3 Design Considerations |
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236 | (2) |
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7.4 MWIR Nonlinear Silicon Devices |
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238 | (10) |
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7.4.1 Raman Amplification |
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239 | (3) |
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7.4.2 Multimode Raman Image Amplifier |
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242 | (3) |
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7.4.3 Design of Cascaded Raman Lasers |
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245 | (2) |
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7.4.4 Other Parametric Nonlinear Effects |
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247 | (1) |
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7.5 Biomedical Applications |
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248 | (2) |
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250 | (1) |
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251 | (4) |
Chapter 8 Novel III-V on Silicon Growth Techniques |
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255 | (42) |
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256 | (5) |
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8.2 Growth and Interface Characterization of the Interfacial Misfit Array |
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261 | (24) |
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8.2.1 Theory of Mismatched Growth |
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261 | (2) |
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8.2.2 Burgers Vector and Types of Misfit Dislocations |
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263 | (2) |
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8.2.3 An Alternative Mechanism for High-Quality Mismatched Growth |
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265 | (1) |
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8.2.4 Interfacial Misfit Dislocation Array-Based Nucleation of GaSb on GaAs |
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266 | (5) |
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8.2.5 Interfacial Array of Misfit Dislocations: A Self-Assembly Process |
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271 | (2) |
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8.2.6 Modeling an Interfacial Array of Misfit Dislocations Using Molecular Mechanics |
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273 | (6) |
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8.2.7 Growth of III-V on Si |
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279 | (2) |
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8.2.8 Growth and Atomic-Force Microscope and Transmission Electron Microscope Analyses of the IMF Array |
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281 | (3) |
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8.2.9 TEM Analyses of the IMF Array |
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284 | (1) |
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8.3 Fabrication and Device Characteristics of Electrically Injected GaSb-AIGaSb Edge Emitters on Si Substrate |
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285 | (5) |
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285 | (1) |
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8.3.2 Growth of Device Structures |
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286 | (1) |
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8.3.3 Etch-Pit Density Characterization of Laser Structures |
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286 | (3) |
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8.3.4 Device Characterization at 77 K |
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289 | (1) |
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290 | (1) |
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291 | (6) |
Chapter 9 Hybrid III-V Lasers on Silicon |
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297 | (44) |
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298 | (3) |
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9.1.1 Need for Si Photonics |
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298 | (1) |
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9.1.2 Different Techniques Usea for Si Photonics |
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298 | (2) |
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9.1.3 Direct Growth of GaAs-Based Lasers on Si |
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300 | (1) |
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9.2 Review of the Recent Developments of III-V Lasers on Si |
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301 | (3) |
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9.3 Growth of Device Quality Quantum Dots on GaAs and Si |
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304 | (2) |
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9.4 Multilayer Self-Organized Quantum Dot Dislocation Filters |
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306 | (7) |
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9.4.1 Design of Quantum Dot Dislocation Filters |
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307 | (2) |
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9.4.2 Transmission Electron Microscopy Characterization |
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309 | (2) |
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9.4.3 Photoluminescence Characterization |
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311 | (2) |
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9.5 Self-Organized InGaAs/GaAs Quantum Dot Lasers on Si |
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313 | (3) |
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9.5.1 Laser Structure, Growth, and Fabrication |
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313 | (1) |
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9.5.2 DC and Small-Signal Modulation Characteristics of Quantum Dot Lasers on Si |
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314 | (2) |
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9.6 III-V Integrated Guided-Wave Devices on Si |
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316 | (10) |
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318 | (1) |
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9.6.2 FIB Etched Facets as Cavity Mirrors and Coupling Grooves |
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319 | (1) |
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9.6.3 Integrated Quantum Dot Lasers and Quantum Well Electroabsorption Modulators on Si |
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319 | (3) |
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9.6.4 Integration of Quantum Dot Lasers with Si Waveguides on a Si Platform |
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322 | (4) |
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326 | (3) |
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329 | (1) |
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329 | (12) |
Chapter 10 Three-Dimensional Integration of CMOS and Photonics |
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341 | (22) |
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341 | (2) |
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343 | (2) |
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10.2.1 Process of SIMOX 3D Sculpting |
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343 | (1) |
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10.2.2 Fabrication of 3D Integrated Optical Devices |
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344 | (1) |
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10.3 Device Characteristics of 3D Integrated Optical Devices |
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345 | (7) |
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10.3.1 Vertically Coupled Microresonators |
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345 | (2) |
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10.3.2 Add-Drop Multiplexers |
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347 | (2) |
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10.3.3 Multipole Filters Based on Microresonators |
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349 | (3) |
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10.4 Monolithic Integration of Photonics and Electronics in 3D |
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352 | (3) |
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10.5 Multilayer 3D Devices |
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355 | (4) |
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10.6 Discussion and Summary |
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359 | (1) |
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359 | (1) |
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360 | (3) |
Chapter 11 Nonlinear Photovoltaics and Energy Harvesting |
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363 | (20) |
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11.1 The Need for Green Integrated Photonics |
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363 | (3) |
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11.2 Nonlinear Optical Losses in Integrated Photonics |
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366 | (4) |
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11.3 Two-Photon Photovoltaic Effect |
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370 | (2) |
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11.4 Nonlinear Photovoltaic Effect in Active Silicon Photonic Devices |
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372 | (2) |
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11.5 Efficiency of the Two-Photon Photovoltaic Effect |
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374 | (2) |
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376 | (3) |
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379 | (1) |
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379 | (4) |
Chapter 12 Computer-Aided Design for CMOS Photonics |
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383 | (34) |
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383 | (2) |
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12.2 The Electronic Design Flow and EDA |
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385 | (2) |
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12.3 CMOS Photonics Process Technology |
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387 | (2) |
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12.4 Photonic Device Libraries |
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389 | (3) |
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12.5 CMOS Photonics Design Deck |
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392 | (16) |
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12.5.1 Photonic Devices in a CMOS Design Environment |
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392 | (2) |
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394 | (1) |
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395 | (2) |
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12.5.4 Simulating Optical Systems |
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397 | (2) |
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12.5.5 Behavioral Models Using Verilog-A |
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399 | (9) |
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12.6 Designing Optoelectronic Subsystems and Systems |
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408 | (4) |
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12.6.1 High-Speed Integrated Receiver |
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408 | (1) |
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12.6.2 High-Speed Integrated Transmitter |
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409 | (1) |
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12.6.3 Integrated Control |
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410 | (1) |
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12.6.4 A 40 Gb/s Transceiver Chip |
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410 | (2) |
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412 | (2) |
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414 | (3) |
Index |
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417 | |